GeneSiC Semiconductor Gets US $1.5M from DOE
The U.S. Department of Energy (DOE) has awarded GeneSiC Semiconductor two separate grants totaling US $1.5 million for the development of high-voltage silicon carbide (SiC) devices that could serve as key enablers for wind- and solar-power integration with the nation’s electricity grid.
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GeneSiC Semiconductor Gets US $1.5M from DOE
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